Balloud, C: search on Z-Library

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1

Defect status near the SiC/substrate interface: investigation of the first stage of the growth by physical vapour transport

A. Mantzari, E.K. Polychroniadis, J. Wollweber, A. Freudenberg, C. Balloud, J. Camassel

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 375 KB

english, 2005

2

Prospects for 3C-SiC bulk crystal growth

D. Chaussende, F. Mercier, A. Boulle, F. Conchon, M. Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E.K. Polychroniadis, C. Balloud, S. Juillaguet, J. Camassel, M. Pons

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 888 KB

english, 2008

3

Growth of Cubic Silicon Carbide Crystals from Solution

Eid, Jessica, Santailler, Jean Louis, Ferrand, Bernard, Ferret, Pierre, Pesenti, J., Basset, Alain, Passero, Antoine, Mantzari, A., Polychroniadis, E.K., Balloud, Carole, Soares, P., Camassel, Jean

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 298 KB

english, 2006

4

Application of LTPL Investigation Methods to CVD-Grown SiC

J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud

Journal:

Chemical Vapor Deposition

Year:

2006

Language:

english

File:

PDF, 857 KB

english, 2006

5

Control of 3C–SiC/Si wafer bending by the “checker-board” carbonization method

T. Chassagne, G. Ferro, H. Haas, H. Mank, A. Leycuras, Y. Monteil, F. Soares, C. Balloud, Ph. Arcade, C. Blanc, H. Peyre, S. Juillaguet, J. Camassel

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 506 KB

english, 2005

6

Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structures

S. Juillaguet, C. Balloud, V. Soulière, C. Sartel, J. Camassel, Y. Monteil

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 141 KB

english, 2005

7

Improvement of cubic silicon carbide crystals grown from solution

J. Eid, J.L. Santailler, B. Ferrand, A. Basset, A. Passero, R. Lewandowska, C. Balloud, J. Camassel

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 279 KB

english, 2006

8

Stable Parameter Range for 3C-SiC Sublimation Growth on Graphite

Wollweber, Jürgen, Mantzari, A., Polychroniadis, E.K., Balloud, Carole, Freudenberg, A., Nitschke, R., Camassel, Jean

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.34 MB

english, 2004

9

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

Ferro, G, Camassel, J, Juillaguet, S, Balloud, C, Polychroniadis, E K, Stoemenos, Y, Dazord, J, Peyre, H, Monteil, Y, Rushworth, S A, Smith, L M

Journal:

Semiconductor Science and Technology

Year:

2003

Language:

english

File:

PDF, 566 KB

english, 2003

10

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Jacquier, Christophe, Ferro, Gabriel, Balloud, Carole, Zielinski, Marcin, Camassel, Jean, Polychroniadis, E.K., Stoemenos, J., Cauwet, François, Monteil, Yves

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 817 KB

english, 2004

11

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Juillaguet, Sandrine, Zielinski, Marcin, Balloud, Carole, Sartel, C., Consejo, C., Boyer, Bernard, Soulière, Veronique, Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 627 KB

english, 2004

12

Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method

Chaussende, Didier, Balloud, Carole, Auvray, Laurent, Baillet, Francis, Zielinski, Marcin, Juillaguet, Sandrine, Mermoux, Michel, Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 399 KB

english, 2004

13

Growth at High Rates and Characterization of Bulk 3C-SiC Material

Ferro, Gabriel, Balloud, Carole, Juillaguet, Sandrine, Vicente, Patrice, Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Year:

2003

File:

PDF, 378 KB

2003

14

Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiC

Zielinski, Marcin, Balloud, Carole, Juillaguet, Sandrine, Boyer, Bernard, Soulière, Veronique, Camassel, Jean

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 187 KB

english, 2005

15

Comparative Studies of 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems

Sartel, C., Balloud, Carole, Soulière, Veronique, Juillaguet, Sandrine, Dazord, Jacques, Monteil, Yves, Camassel, Jean, Rushworth, S.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 664 KB

english, 2004

16

Comparative Evaluation of Free-Standing 3C-SiC Crystals

Polychroniadis, E.K., Balloud, Carole, Juillaguet, Sandrine, Ferro, Gabriel, Monteil, Yves, Camassel, Jean, Stoemenos, J.

Journal:

Materials Science Forum

Year:

2005

Language:

english

File:

PDF, 508 KB

english, 2005

17

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers

Juillaguet, Sandrine, Balloud, Carole, Pernot, Julien, Sartel, C., Soulière, Veronique, Camassel, Jean, Monteil, Yves

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.10 MB

english, 2004

18

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

Ferro, Gabriel, Panknin, D., Stoemenos, J., Balloud, Carole, Camassel, Jean, Polychroniadis, E.K., Monteil, Yves, Skorupa, Wolfgang

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 2.05 MB

english, 2004

19

Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

Rushworth, S., Ferro, Gabriel, Camassel, Jean, Juillaguet, Sandrine, Balloud, Carole, Polychroniadis, E.K., Stoimenos, Y., Seigle-Ferrand, P., Dazord, Jacques, Monteil, Yves, Smith, L.M.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 1.95 MB

english, 2004

20

Characterization of Bulk 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

Latu-Romain, Laurence, Chaussende, Didier, Balloud, Carole, Juillaguet, Sandrine, Rapenne, L., Pernot, Etienne, Camassel, Jean, Pons, Michel, Madar, Roland

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 1.15 MB

english, 2006

21

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

Chassagne, Thierry, Leycuras, André, Balloud, Carole, Arcade, P., Peyre, Hervé, Juillaguet, Sandrine

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 485 KB

english, 2004